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Data Sheet
www.rohm.com
? 2012 ROHM Co., Ltd. All rights reserved.
Schottky Barrier Diode
RB228T100
lApplications
lDimensions (Unit : mm)
lStructure
Switching power supply
lFeatures
1)Cathode common type.
2)Low IR
3)High reliability
4)AEC-Q101 qualified
lConstruction
Silicon epitaxial planer
lAbsolute maximum ratings
(Ta=25
?C)
Symbol
Unit
VRM
V
VR
V
Io
A
IFSM
A
Tj
?C
Tstg
?C
(*2) per diode
lElectrical characteristics
(Ta=25
?C)
Symbol
Min.
Typ.
Max.
Unit
Conditions
Forward voltage
VF
-
-
0.87
V
IF=5A
Reverse current
IR
-
-
0.15
mA
VR=100V
Thermal impedance
θjc
-
-
2.00
°C/W
junction to case
Reverse voltage (DC)
100
Parameter
Limits
Reverse voltage (repetitive)
110
Storage temperature
-40 to +150
(*1) Business frequence sin wave, Tc=83°C max. Rating of per diode : lo/2
Parameter
Average rectified forward current (*1)
30
Forward current surge peak (60Hz?1cyc) (*2)
100
Junction temperature
150
ROHM : ＴO220FN
①
Manufacture Date
1.2
1.3
0.8
(1)
(2)
(3)
10.0±0.3
　　　 0.1
5.0±0.2
8.0±0.2
12.0±0.2
2.8±0.2
　　　 0.1
4.5±0.3
　　　 0.1
0.7±0.1
0.05
2.6±0.5
13.5MIN
8.0
15.0±0.4
　 0.2
①
1/4
2012.08 - Rev.B
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